Supplement News: NDT for Silicon Carbide Wafers Now Available

February 1, 2004
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FAIRFIELD, CT-Competitive Technologies Inc. signed an exclusive agreement with the University of South Carolina Research Foundation (USCRF) to license and commercialize a new method of nondestructive defect delineation in silicon carbide [SiC] wafers. Developed at the Electrical Engineering and Computer Science and Engineering Departments of the University, the technology can be used for wafer-scale defect mapping, characterize a variety of wafer types, and locate and map defects in SiC wafers.

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