Opto Diode Corporation, an ITW company, introduces the NXIR family of photodiodes, designed specifically for back-facet laser-monitoring applications that require improved performance in the near-infrared (NIR) spectrum from 700 nm to 1100 nm. The new NXIR product line expands the company’s popular high performance SXUV and UVG photodiode series designed to maximize measurement repeatability and reliability in high-powered UV laser-monitoring systems with affordable products optimized for near-infrared wavebands.

The NXIR-RF36 and NXIR-RF70 near-IR / red-enhanced models offer reduced footprints and are ideally suited for integration with semiconductor lasers notably, Fabry-Perot (FP), distributed feedback (DFB), and vertical-cavity surface-emitting lasers (VCSELs).  The new devices have high responsivity of 0.65 A/W @ 850 nm, low capacitance of 5 pico-farads (pF) at 0 volts, and high shunt resistance, greater than 200 MΩ. The NXIR-RF36 has an active area of 0.36 mm2; the NXIR-RF70 has an active area of 0.70 mm2. The detectors are available in either waffle pack or dicing tape for high-volume shipments.

Opto Diode’s third device in the series, the NXIR-5W, is optimal for high-power-laser monitoring that requires higher responsivity in the NIR spectrum. It can be utilized with YAG lasers used in biological, dental, and medical equipment, plus fluid dynamics, manufacturing, and military applications. The NXIR-5W has high responsivity at 1064 nm with low reverse bias voltage of 10V. Other features include high responsivity of 0.45 A/W at 1064 nm, low dark current of 1nA, and low capacitance of 10 pF. The NXIR-5W is available in a hermetically-sealed, standard two-lead TO-5 package. 


Opto Diode Corporation

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